Product Series: 53814

53814

300V / 3A Form A contacts (Normally Open) Hybrid Solid State Relay

Rad Hard 100K+ TID

Features

High Voltage / Low Resistance

Wide Band Gap semiconductors for low resistance

Magnetically coupled command for fast response

Selectable Continuous or Mag Latch function

Rugged Hermetic Package

No Optocouplers

RadHard TID >100kRad(Si)

No SEE: LET > 82meV*cm^2/mg

Specifications

Bias Input Voltage: 4.7 VDC to 5.3 VDC

Bias Input Current: 25 mA to 45 mA

Command Input: 5 mA

Isolation Input to Output: 1000 VDC

All pins to case isolation: 1000 VDC

Power Dissipation: W to 2 W

Storage Temp: -65 °C to +150 °C

Shock: 50 G's

Vibration: 30 G's

Acceleration: 500 G's

Weight: 18 gms typical

Environment

Grade EU:

Full Output Power at T_case = 85°C

Minimum Output Power at T_case = -55°C

Linearly derates to zero at T_case = 115

TID up to kRad(Si)
No SEE up to 60MeV*cm²/mg

Grade M:

Full Output Power at T_case = 85°C

Minimum Output Power at T_case = -55°C

Linearly derates to zero at T_case = 115

TID up to kRad(Si)
No SEE up to 60MeV*cm²/mg

Grade E:

Full Output Power at T_case = 125°C

Minimum Output Power at T_case = -55°C

Linearly derates to zero at T_case = 135

TID up to kRad(Si)
No SEE up to 60MeV*cm²/mg

Additional Notes

Uses a wide bandgap power semiconductor for high performance.

Magnetically coupled

User configured for continuous or pulse latching

For continuous operation, connect 5 VDC bias from pin 1 to bias ground pin 2.

Ground pin 3 to energize the SSR.

For Latch operation: leave pin 3 open, connect +5VDC bias from pin 1 to bias ground pin 2.

To Energize apply +5VDC pulse, 25 usec minimum to pin 5.

To De-Energize apply +5VDC pulse, 25 usec minimum to pin 4.

Power Dissipation: Total steady state power dissipation is limited to 2 watts provided the baseplate temperature is limited to the rated temperature.