+1.631.345.3100
Made in the USA

Product Series: 53818

Print Page

53818

600V / 10A Form C contacts (SPDT) Hybrid Solid State Relay

Rad Hard 100K+ TID

 

Features

High Voltage / Low Resistance
Wide Band Gap semiconductors for low resistance
Magnetically coupled command for fast response
Rugged Hermetic Package
No Optocouplers
Logic Level Drive
RadHard TID >100kRad(Si)
No SEE: LET > 82meV*cm^2/mg

Specifications

Bias Input Voltage: 4.7 VDC to 5.3 VDC
Bias Input Current: 30 mA to 50 mA
Command Input: 1.0 mA
Isolation Input to Output: 1000 VDC
All pins to case isolation: 1000 VDC
Power Dissipation: W to 10 W
Storage Temp: -65 °C to +150 °C
Shock: 50 G's
Vibration: 30 G's
Acceleration: 500 G's
Weight: 32 gms typical

Environment

Grade EU:
Full Output Power at Tcase = 85°C
Minimum Output Power at Tcase = -55°C
Linearly derates to zero at Tcase = 115
TID up to kRad(Si)
No SEE up to 60MeV*cm2/mg
Grade L:
Full Output Power at Tcase = 85°C
Minimum Output Power at Tcase = -55°C
Linearly derates to zero at Tcase = 115
TID up to 45kRad(Si)
No SEE up to 60MeV*cm2/mg
Grade LE:
Full Output Power at Tcase = 125°C
Minimum Output Power at Tcase = -55°C
Linearly derates to zero at Tcase = 135
TID up to 45kRad(Si)
No SEE up to 60MeV*cm2/mg
Grade S:
Full Output Power at Tcase = 85°C
Minimum Output Power at Tcase = -55°C
Linearly derates to zero at Tcase = 115
TID up to 100kRad(Si)
No SEE up to 60MeV*cm2/mg
Grade SE:
Full Output Power at Tcase = 125°C
Minimum Output Power at Tcase = -55°C
Linearly derates to zero at Tcase = 135
TID up to 100kRad(Si)
No SEE up to 60MeV*cm2/mg

Additional Notes

Uses a wide bandgap power semiconductor for high performance.

Magnetically coupled

To energize, after applying +5VDC bias, apply ground to coil pin.

Power Dissipation: Total steady state power dissipation is limited to 10 watts at maximum rated baseplate temperature.

One independent N.O switch contact, one independent N.C. switch contact. Two isolated unconnected switches for connection flexibility. Contacts break before make